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VEC2801

Sanyo Semicon Device
Part Number VEC2801
Manufacturer Sanyo Semicon Device
Description P-Channel Silicon MOSFET / Schottky Barrier Diode
Published Jan 9, 2012
Detailed Description www.DataSheet.co.kr Ordering number : EN9078 VEC2801 SANYO Semiconductors DATA SHEET VEC2801 Features • • MOSFET :...
Datasheet PDF File VEC2801 PDF File

VEC2801
VEC2801

Overview
www.
DataSheet.
co.
kr Ordering number : EN9078 VEC2801 SANYO Semiconductors DATA SHEET VEC2801 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications The best suited for DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• 1.
8V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T...


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