VEC2611

www.DataSheet.co.kr Ordering number : ENA0425 VEC2611 SANYO Semiconductors DATA SHEET VEC2611 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 1.8V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 20 ±10 3 12 0.9 1.0 150 --55 to +150 P-channel -12 ±8 --2.6 --10.4 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A 20 1 ±10 0.4 3.3 5.6 1.3 V µA µA V S Symbol Conditions Ratings min typ max Unit Marking : CP Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home app...