VEC2610

www.DataSheet.co.kr Ordering number : ENA0104 VEC2610 VEC2610 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications The best suited for inverter applications. The VEC2610 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. Mounting height 0.75mm. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm)1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions N-channel 20 ±10 4.5 18 0.9 1.0 150 --55 to +150 P-channel -20 ±10 --3 -12 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2.5A ID=2A, VGS=4V ID=1A, VGS=2.5V ID=0.3A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 20 1 ±10 0.5 4.5 7.5 32 40 55 570 110 80 42 57 80 1...