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2SC2230

Toshiba Semiconductor

TRANSISTOR

2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2230,2SC2230A High-Voltage Genera...


Toshiba Semiconductor

2SC2230

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2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications Unit: mm High breakdown voltage: VCEO = 180 V (2SC2230A) High DC current gain Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range 2SC2230 2SC2230A Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 200 160 180 5 100 50 800 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Symbol ICBO IEBO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 200 V, IE = 0 VEB = 5 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 50 mA IC = 50 mA, IB = 5 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 80 ― 0.50 50 ― Typ. ― ― ― ― ― 0.60 ― ― Max 0.1 0.1 400 ― 0.5 0.70 ― 7.0 V V MHz pF Unit µA µA Note: hFE (1) classification Y: 120 to 240, GR: 200 to 400 1 2004-07-07 Free Datasheet http://www.Datasheet4U.com 2SC2230,2SC2230A Marking Part No. (or abbreviation code) Part No. 2SC2230 2SC2230A C2230 Part No. (or...




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