TND027SW

www.DataSheet.co.kr Ordering number : EN7437C TND027SW SANYO Semiconductors DATA SHEET TND027SW Features ExPD(Excellent Power Device) Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications N-channel MOSFET built in Overheat protection (Self recovery type) Overcurrent protection (Self recovery type current limiting function) Overvoltage protection Incorporates two sets of circuit Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Output Current Input Voltage Allowable Power Dissipation Operating Supply Voltage Operating Temperature Junction Temperature Storage Temperature Symbol VDS IO(DC) VIN PD VDS(opr) Topr Tj Tstg When mounted on ceramic substrate (1200mm2×0.8mm) Iunit When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings 60 1.5 --0.3 to +10 1.3 1.7 40 --40 to +85 150 --55 to +150 Unit V A V W W V °C °C °C Package Dimensions unit : mm (typ) 7005A-005 5.0 0.8 8 5 0.2 0.3 Product & Package Information Package : SOP8 JEITA, JEDEC : SC-87, SOT-96 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TL Marking 0.1 6.0 4.4 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : GND1 2 : IN1 3 : GND2 4 : IN2 5 : OUT2 6 : OUT2 7 : OUT1 8 : OUT1 SANYO : SOP8 TL TND 027 LOT No. Block Diagram Overcurrent protective circuit IN Output current control Overheat protective circuit OUT(D) Overvoltage protective circuit 0.7 Gate shutdown circuit ESD protective circuit GND(S) http://semicon.sanyo.com/en...