TIG066SS

www.DataSheet.co.kr Ordering number : ENA1794 TIG066SS SANYO Semiconductors DATA SHEET TIG066SS Features N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage Enhansment type High speed switching 4.0V drive Built-in Gate-to-Emitter protection diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage (DC) Collector-to-Emitter Voltage (Pulse) Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VCESP VGES VGESP ICP dv / dt Tch Tstg PW≤1ms PW≤1ms CM=600μF VCE≤320V, starting Tch=25°C Conditions Ratings 400 450 ±6 ±8 150 1500 150 -40 to +150 Unit V V V V A V / μs °C °C Package Dimensions unit : mm (typ) 7005A-008 5.0 0.8 8 5 0.2 0.3 Product & Package Information Package : SOP8 JEITA, JEDEC : SC-87, SOT96 Minimum Packing Quantity : 1000 pcs./reel Packing Type: TL Marking 0.1 6.0 4.4 TL TIG 066 LOT No. 0.8 1 1.27 4 0.43 1.8 MAX 1.5 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : SOP8 Electrical Connection 5 to 8 0.7 4 1 to 3 http://semicon.sanyo.com/en/network 90810PJ TK IM TC-00002414 No. A1794-1/6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr TIG066SS Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-E...