N-channel Silicon Junction FET
www.DataSheet.co.kr
Ordering number : ENA1617A
TF256TH
SANYO Semiconductors
DATA SHEET
TF256TH
Features
• • • • • •...
Description
www.DataSheet.co.kr
Ordering number : ENA1617A
TF256TH
SANYO Semiconductors
DATA SHEET
TF256TH
Features
N-channel Silicon Juncton FET
Electret Condenser Microphone Applications
High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent transient characteristics Adoption of FBET process Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C
Package Dimensions
unit : mm (typ) 7031-001
Top View 1.4 0.2 0.25 3 1.2 0.8
Product & Package Information
Package : VTFP JEITA, JEDEC : SC-106A Minimum Packing Quantity : 8,000 pcs./real
Packing Type: TL
Marking
3
Rank
1 0.2
2 0.2 0.45 0.34
0.1
N
TL
1
2
Electrical Connection
1
Bot t om View 0.07
1 : Drain 2 : Source 3 : Gate SANYO : VTFP
3
0.07
2
http://semicon.sanyo.com/en/network
10511 TKIM TC-00002535/N2509GB TKIM TC-00002097 No. A1617-1/5
Datasheet pdf - http://www.DataSheet4U.net/
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TF256TH
Electrical Characteristics at Ta=25°C
Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer...
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