TF250TH

www.DataSheet.co.kr Ordering number : ENA0381 TF250TH SANYO Semiconductors DATA SHEET TF250TH Features N-channel Silicon Junction FET Electret Condenser Microphone Applications Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz VDS=2V, VGS=0V, f=1MHz Ratings min --20 --0.1 140* 0.7 1.3 2.8 0.55 --0.4 --1.0 350* typ max Unit V V µA mS pF pF Marking: C * : The TF250TH is classified by IDSS as follows : (unit : µA) Continued on next page. Rank IDSS 4 140 to 240 5 210 to 350 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of r...