TF208TH

www.DataSheet.co.kr Ordering number : ENN7698A TF208TH N-channel Silicon Junction FET TF208TH Features Electret Condenser Microphone Applications Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Electrical Characteristics at Ta=25°C (Value per element) Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol V(BR)GDO VGS(off) IDSS yfs Ciss Crss Conditions IG=-100µA VDS=2V, ID=1µA VDS=2V, VGS=0V VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz Ratings min --20 --0.1 140* 0.5 1.4 5.0 1.1 --2.0 --0.6 --2.0 --1.0 --1.0 350* typ max Unit V V µA mS pF pF dB dB dB VDS=2V, VGS=0V, f=1MHz [Ta=25˚C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz Reduced Voltage Characteristic Frequency Characteristic ∆GVV ∆GVf VIN=10mV, f=1kHz, VCC=2.0→1.5V f=1kHz to 110Hz Continued on next page. * : The TF208TH is classified by IDSS as follows : (u...