N-channel Silicon Junction FET
www.DataSheet.co.kr
Ordering number : ENA0727
TF202C
SANYO Semiconductors
DATA SHEET
N-channel Silicon Junction FET
...
Description
www.DataSheet.co.kr
Ordering number : ENA0727
TF202C
SANYO Semiconductors
DATA SHEET
N-channel Silicon Junction FET
TF202C
Features
Electret Condenser Microphone Applications
Especially suited for use in electret condenser microphone for audio equipments and telephones. Ultrasmall package permitting applied sets to be small and slim. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Drain Current Symbol V(BR)GDO VGS(off) IDSS IG=-100µA VDS=5V, ID=1µA VDS=5V, VGS=0V Conditions Ratings min --20 --0.2 140* --0.6 --1.2 350* typ max Unit V V µA
Marking: E * : The TF202C is classified by IDSS as follows : (unit : µA) Rank E4 E5 IDSS 140 to 240 210 to 350
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medic...
Similar Datasheet