SCH1335

www.DataSheet.co.kr Ordering number : ENA1939 SCH1335 SANYO Semiconductors DATA SHEET SCH1335 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --12 ±10 --2.5 --10 0.8 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7028-002 1.6 0.05 0.2 6 5 4 0.2 Product & Package Information Package : SCH6 JEITA, JEDEC : Minimum Packing Quantity : 5,000 pcs./reel Packing Type : TL Marking LOT No. LOT No. 1.6 1.5 YL 0.05 1 2 0.56 3 0.5 TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 Electrical Connection 1, 2, 5, 6 0.25 3 4 http://semicon.sanyo.com/en/network 33011PE TKIM TC-00002321 No. A1939-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SCH1335 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Dela...