2SC2120

1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 800 160 600 150 −55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 hFE (1) VCE = 1 V, IC = 100 mA (Note) hFE (2) VCE = 1 V, IC = 700 mA VCE (sat) IC = 500 mA, IB = 20 mA VBE VCE = 1 V, IC = 10 mA fT VCE = 5 V, IC = 10 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit   0.1 µA   0.1 µA 30   V 100  320 35     0.5 V 0.5  0.8 V  120  MHz  13  pF 1 2005-08-02 2222SC2120 2 2005-08-02 3332SC2120 RESTRICTIONS ON PRODUCT USE 000707EAA TOSHIBA is continually working to improve the quality a...