HFA80NK40C

www.DataSheet.co.kr PD -2.470A HFA80NK40C HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 TM Ultrafast, Soft Recovery Diode BASE COMMON CATHODE 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF(typ.)ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM IAS EAS PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current  Maximum Single Pulse Avalanche Current ‚ Non-Repetitive Avalanche Energy ‚ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. TO-249AA (MODIFIED) Max. 400 89 44 300 5.0 1.4 160 63 -55 to +150 Units V A mJ W °C 300 (0.063 in. (1.6mm) from case) Thermal - Me...