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GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
...
www.DataSheet.co.kr
GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar
Transistor (Trench IGBT), 100 A
FEATURES
Trench IGBT technology temperature coefficient Square RBSOA 10 μs short circuit capability HEXFRED® antiparallel diodes with ultrasoft reverse recovery
SOT-227
with
positive
TJ maximum = 150 °C Fully isolated package Very low internal inductance ( 5 nH typical) Industry standard outline UL approved file E78996 Compliant to RoHS directive 2002/95/EC
1200 V 100 A at 119 °C 1.73 V
PRODUCT SUMMARY
VCES IC DC VCE(on) typical at 100 A, 25 °C
BENEFITS
Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Speed 4 kHz to 30 kHz Very low VCE(on) Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Peak diode forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC (1) ICM ILM IF IFSM VGE PD PD VISOL TC = 25 °C TC = 119 °C TC = 25 °C TC = 119 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 258 174 450 450 50 34 180 ± 20 893 221 176 44 2500 V W V A UNITS V
Power dissipation, diode Isolation voltage
Note (1) Maximum continuous collector curre...