isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW40 = 3...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B
·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUW40
450
VCEV
Collector-Emitter Voltage VBE= -1.5V
BUW40A
550
V
BUW40B
650
BUW40
300
VCEO(SUS) Collector-Emitter Voltage BUW40A
350
V
BUW40B
400
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
2
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
BUW40/A/B
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
BUW40/A/B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BUW40 BUW40A IC= 50mA ; IB= 0 BUW40B
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A IC= 1A; IB= 0.2A,TC= 150℃
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 3V
ICEV
Collector Cutoff Current
BUW40 BUW40A BUW40B
VCE= 450V;VBE= -1.5V VCE= 450V;VBE= -1.5V,TC= 150℃
VCE= 550V;VBE= -1.5V VCE= 550V;VBE= -1.5V,TC= 150℃
VCE= 650V;VBE= -1.5V VCE=...