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2SC2062S
Transistors
High-gain Amplifier Transistor (32V, 0.3A)
2SC2062S
zFeatures 1) Darlington c...
www.DataSheet4U.com
2SC2062S
Transistors
High-gain Amplifier
Transistor (32V, 0.3A)
2SC2062S
zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C)
C
5.0
(1) (2) (3)
zExternal dimensions (Unit : mm)
SPT
4.0 2.0
3.0
(15Min.)
3Min.
0.45
2.5
0.5
0.45
(1)Emitter (2)Collector
B
Taping specifications
(3)Base
E : Emitter C : Collector B : Base
E
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 40 32 12 0.3 0.3 150 −55 to +150 Unit V V V A W
°C °C
zElectrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Symbol BVCBO BVCES BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 12 − − 10000 − − − Typ. − − − − − − − 200 2.5 Max. − − − 0.1 0.1 − 1.4 − − Unit V V V µA µA − V MHz pF IC=100µA IC=10mA IE=100µA VCB=30V VEB=12V VCE/IC=3V/0.1A IC/IB=200mA/0.2mA VCE=5V , IE= −10mA , f=100MHz VCB=10V , IE=0A , f=1MHz Conditions
Transition frequency Output capacitance
∗
∗ Transition frequency of the device.
zPackaging specifications and hFE
Type Package hFE Code Basic ordering unit...