isc Silicon NPN Power Transistor
BU999
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 140V(Min) ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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