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BU608D

Part Number	BU608D
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jan 9, 2012
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Lo...
Datasheet	BU608D PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.
5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃...

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