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BU522

Part Number	BU522
Manufacturer	Inchange Semiconductor
Description	Silicon Darlington NPN Power Transistor
Published	Jan 9, 2012
Detailed Description	isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(s...
Datasheet	BU522 PDF File

Overview

isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.
5V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 350 V VCER Collector-Emitter Voltage 375 V VCBO Collector-Base Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERIS...

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