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BU522A

Inchange Semiconductor
Part Number BU522A
Manufacturer Inchange Semiconductor
Description Silicon Darlington NPN Power Transistor
Published Jan 9, 2012
Detailed Description isc Silicon Darlington NPN Power Transistor BU522A DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(...
Datasheet PDF File BU522A PDF File

BU522A
BU522A

Overview
isc Silicon Darlington NPN Power Transistor BU522A DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.
0V @ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in ignition circuit.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 400 V VCER Collector-Emitter Voltage 425 V VCBO Collector-Base Voltage 450 V VEBO Emitter-Base Voltage 5 V IC Collector Current 7 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERI...


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