BU104

isc Silicon NPN Power Transistor BU104 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max.)@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 150 V VCEX Collector-Emitter Voltage VBE= -5V 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Repetitive 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 3 A 85 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1A ICBO Collector Cutoff Current VCB= 250V; IE= 0 ICEX Collector Cutoff Current VCE= 400V; VBE= -5V IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 5A...