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2SC1906

Hitachi Semiconductor

Silicon NPN Transistor

2SC1906 Silicon NPN Epitaxial Planar Application • VHF amplifier • Mixer, Local oscillator Outline TO-92 (2) 1. Emitt...



2SC1906

Hitachi Semiconductor


Octopart Stock #: O-70954

Findchips Stock #: 70954-F

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Description
2SC1906 Silicon NPN Epitaxial Planar Application VHF amplifier Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 –50 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 — 40 600 — — — — — Typ — — — — — 1000 1.0 0.2 10 33 18 Max — — — 0.5 — — 2.0 1.0 25 — — MHz pF V ps dB dB Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 3 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCE = 10 V, I C = 5 mA VCE = 10 V, I C = 5 mA f = 45 MHz f = 200 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Collector to emitter saturation voltage Base time constant Power gain V(BR)EBO I CBO hFE fT Cob VCE(sat) rbb’ PG CC 2 2SC1906 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics 20 PC 180 = 160 140 0 30 ...




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