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DG3536 Dataheets PDF



Part Number DG3536
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Low-Voltage Dual SPDT Analog Switch
Datasheet DG3536 DatasheetDG3536 Datasheet (PDF)

www.DataSheet.co.kr DG3535, DG3536 Vishay Siliconix 0.25  Low-Voltage Dual SPDT Analog Switch DESCRIPTION The DG3535, DG3536 is a sub 1  (0.25  at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG3535, DG3536 has on-resistance matching (less than 0.05  at 2.7 V) and flatness (less than 0.2 at 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG3535, DG3536 an ideal interface to low voltage DSP control sign.

  DG3536   DG3536


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www.DataSheet.co.kr DG3535, DG3536 Vishay Siliconix 0.25  Low-Voltage Dual SPDT Analog Switch DESCRIPTION The DG3535, DG3536 is a sub 1  (0.25  at 2.7 V) dual SPDT analog switches designed for low voltage applications. The DG3535, DG3536 has on-resistance matching (less than 0.05  at 2.7 V) and flatness (less than 0.2 at 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds makes the DG3535, DG3536 an ideal interface to low voltage DSP control signals. The DG3535, DG3536 has fast switching speed with breakbefore-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is - 69 dB at 100 kHz. The DG3535, DG3536 is built on Vishay Siliconix’s highdensity low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG3535, DG3536 contains the additional benefit of 2000 V ESD protection. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For MICRO FOOT analog switching products manufactured with tin/ silver/copper (SnAgCu) device terminations, the lead (Pb)-free “-E1” suffix is being used as a designator. FEATURES • • • • • Low voltage operation Low on-resistance - RON: 0.25  at 2.7 V - 69 dB OIRR at 2.7 V, 100 kHz MICRO FOOT® package ESD protection > 2000 V BENEFITS • • • • • Reduced power consumption High accuracy Reduce board space 1.6 V logic compatible High bandwidth APPLICATIONS • • • • • • Cellular phones Speaker headset switching Audio and video signal routing PCMCIA cards Battery operated systems Relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG3535, DG3536 MICRO FOOT 10-Bump V+ A IN1 NO1 NC1 NO2 NC2 IN2 B COM1 C NC1 GND NC2 IN2 COM2 NO2 1 2 3 4 DG3535 Top View IN1 COM1 V+ TRUTH TABLE Logic NC1 and NC2 ON OFF NO1 and NO2 OFF ON 0 1 COM2 NO1 GND 1 2 3 4 Device Marking A1 Locator A NO2 IN2 COM2 NC2 ORDERING INFORMATION Temp. Range Package Part Number DG3535DB-T5-E1 DG3535DB-T1-E1 DG3536DB-T5-E1 MICRO FOOT: 10 Bump - 40 °C to 85 °C (4 x 3, 0.5 mm Pitch, 238 µm Bump Height) B GND DG3536 Top View IN1 COM1 V+ XXX 3535 3535 = Example Base Part Number xxx = Data/Lot Traceability Code C NO1 NC1 Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr DG3535, DG3536 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Reference V+ to GND IN, COM, NC, NOa Continuous Current (NO, NC, COM) Peak Current (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature Package Solder Reflow Conditions ESD per Method 3015.7 Power Dissipation (Packages)c MICRO FOOT: 10 Bump (4 x 3 mm)d b Limit - 0.3 to + 6 - 0.3 to (V+ + 0.3 V) ± 300 ± 500 - 65 to 150 250 >2 457 (D Suffix) IR/Convection Unit V mA °C kV mW Notes: a Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b Refer to IPC/JEDEC (J-STD-020B) c All bumps welded or soldered to PC board. d Derate 5.7 mW/°C above 70 °C. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Parameter Analog Switch Analog Signal Ranged On-Resistanced RON Flatnessd On-Resistance Match Between Channelsd VNO, VNC, VCOM RON RON Flatness RDS(on) INO(off) INC(off) ICOM(off) Channel-On Leakage Current Digital Control Input High Voltaged Input Low Voltage Input Capacitance Input Current VINH VINL Cin IINL or IINH VIN = 0 or V+ Full Full Full Full 1 10 1 1.4 0.5 V pF µA ICOM(on) V+ = 2.7 V, VCOM = 0.6/1.5 V INO, INC = 100 mA Full Room Full Room Room Room Full Room Full Room Full -2 - 20 -2 - 20 -2 - 20 0 0.25 V+ 0.4 0.5 0.15 0.05 2 20 2 20 2 20 nA  V Symbol V+ = 3 V, ± 10 %,VIN = 0.5 V or 1.4 Ve Temp.a Limits - 40 to 85 °C Min.b Typ.c Max.b Unit Switch Off Leakage Current V+ = 3.3 V, VNO, VNC = 0.3 V/3 V, VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V www.vishay.com 2 Document Number: 72961 S11-0303-Rev. G, 28-Feb-11 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr DG3535, DG3536 Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Parameter Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Capacitance Power Supply Power Supply Current I+ VIN = 0 or V+ Room Full 0.001 1.0 1.0 µA d d Limits - 40 °C to 85 °C Temp.a Room Full Min.b Typ.c 52 43 1 6 21 - 69 - 69 145 145 406 406 pF pC dB Max.b 82 90.


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