2SC1775

2SC1775, 2SC1775A Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA872/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1775 90 90 5 50 300 150 –55 to +150 2SC1775A 120 120 5 50 300 150 –50 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SC1775 Item Collector to emitter breakdown voltage Collector cutoff current Symbol Min V(BR)CEO I CBO 1 2SC1775A Max — 0.5 — Min 120 — — Typ — — — — — — — 200 1.6 — Max — — 0.5 1200 — 0.75 0.5 — — 5.0 V V MHz pF dB Unit V µA µA Test conditions I C = 1 mA, RBE = ∞ VCB = 75 V, IE = 0 VCB = 100 V, IE = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, I C = 0.1 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, I C = 50 µA, Rg = 50 kΩ f = 10 Hz f=1 kHz Typ — — — — — — — 200 1.6 — 90 — — DC current transfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 400 160 — — — — — 1200 400 — 0.75 0.5 — — 5.0 160 — — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF — Note: E 400 to 800 — 1.5 — — 1.5 dB 1. The 2SC1775/A is grouped by hFE1 as follows. F 600 to 1200 2 2SC17...