Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general ampl...
Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon
NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SC1573 and 2SA879
s Features
q High collector to emitter voltage VCEO. q High transition frequency fT.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
2SC1573
250
Collector to
2SC1573A VCBO
300
V
base voltage
2SC1573B
400
2SC1573
200
Collector to
2SC1573A VCEO
300
V
emitter voltage
2SC1573B
400
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
100
mA
Collector current
IC
70
mA
Collector power dissipation PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
s Electrical Characteristics (Ta=25˚C)
5.9±0.2
Unit: mm
4.9±0.2
8.6±0.2
0.7–0.2
+0.3
0.7±0.1 2.54±0.15
13.5±0.5
+0.2
0.45–0.1 1.27
1.27
123
3.2
+0.2
0.45–0.1
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
Parameter
Collector cutoff current
Collector to emitter voltage
2SC1573 2SC1573A 2SC1573B
Symbol ICBO
VCEO
Conditions VCB = 12V, IE = 0
IC = 100µA, IB = 0
min
typ
max Unit
2
µA
200
300
V
400
Emitter to base voltage
2SC1573 2SC1573A 2SC1573B
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
2SC1573 2SC1573A 2SC1573B
VEBO
hFE* VCE(sat) fT
Cob
5 IE = 1µA, IC = 0
7
VCE = 10V, IC = 5mA
30
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
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