2SC1515K

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature VEBO IC PC Tj Tstg Ratings 200 200 150 5 50 200 150 –55 to +150 Unit V V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 200 150 5 — 30 — — 60 — Typ — — — — — — — — — Max — — — 0.1 300 1.0 1.5 — 10 V V MHz pF Unit V V V µA Test conditions I C = 10 µA, RBE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 6 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CES voltage V(BR)CEO Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE VCE(sat) VBE(sat) fT Cob 2 2SC1515 (K) Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics 20 200 180 16 160 140 12 120 100 8 80 60 4 40 20 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) P C = 200 20 0 m W 100 Collector Cutof...