Transistors
2SC1509
Silicon NPN epitaxial planar type
For low-frequency driver amplification Complementary to 2SA0777 (...
Transistors
2SC1509
Silicon
NPN epitaxial planar type
For low-frequency driver amplification Complementary to 2SA0777 (2SA777)
5.9±0.2
Unit: mm 4.9±0.2
8.6±0.2
■ Features
High collector-emitter voltage (Base open) VCEO
13.5±0.5 0.7–+00..23
Optimum for the driver stage of a low-frequency and 25 W to 30
0.7±0.1
W output amplifier
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
80
V
c type Collector-emitter voltage (Base open) VCEO
80
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
5
(3.2)
V
le sta ntinu Collector current
IC
0.5
A
a e cyc isco Peak collector current
ICP
1
A
life d, d Collector power dissipation
PC
750
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg −55 to +150 °C
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector 3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
in n es follopwlianngefdoudriscontin ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open)
tinu nan Collector-emitter voltage (Base open)
M is iscon ainte Emitter-base voltage (Collector open)
e/D e, m Collector-base cutoff current (Emitter open)
D anc typ Forward current transfer ratio
Maintentenance Collector-emitter saturation voltage main Base-emitter saturation voltage ned Transition frequency (pla Collector output capacitan...
