Document
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
/ ■ Features
• High collector-emitter voltage (Base open) VCEO
e • High transition frequency fT
c tage. ■ Absolute Maximum Ratings Ta = 25°C
n d le s Parameter
Symbol Rating
Unit
0.7±0.2 12.9±0.5
a e cyc Collector-base voltage 2SC1473 VCBO
250
V
life (Emitter open)
2SC1473A
300
n u uct Collector-emitter voltage 2SC1473 VCEO
200
V
rod (Base open)
2SC1473A
300
2.3±0.2
te tin r P Emitter-base voltage (Collector open) VEBO
7
V
fou Collector current
IC
70
mA
ing type n. Peak collector current
ICP
100
mA
in n llow ce atio Collector power dissipation
PC
750
mW
fo an pe ed rm Junction temperature
Tj
150
°C
a o ludes inten ce ty d typ t info /en/ Storage temperature
Tstg −55 to +150 °C
0.7±0.1
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23 EIAJ: SC-43A
1: Emitter 2: Collector 3: Base TO-92-B1 Package
c ued incned maintenanontinued type t lates .co.jp ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tin la a isc ue ou nic Parameter
Symbol
Conditions
Min Typ Max Unit
on p m d d ntin ab aso Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0
200
V
isc ne co RL an (Base open)
2SA1473A
300
e/D pla dis ing U on.p Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7
D c w ic Collector-emitter cutoff 2SA1473 ICEO VCE = 120 V, Ta = 60°C, IB = 0
tenan follo .sem current (Base open)
2SA1473A
VCE = 120 V, IB = 0
in it w Forward current transfer ratio *
hFE VCE = 10 V, IC = 5 mA
60
Ma e vis ://ww Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 5 mA
as ttp Transition frequency
fT
VCB = 10 V, IE = −10 mA, f = 200 MHz 50
Ple h Collector output capacitance
Cob VCB = 10 V, IE = 0, f = 1 MHz
V
1
µA
1
220
1.2
V
80
MHz
10
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification
Rank
Q
R
hFE
60 to 150 100 to 220
Publication date: March 2004
SJC00105BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1473, 2SC1473A
Collector power dissipation PC (W)
Collector current IC (mA)
PC Ta
IC VCE
IC VBE
1.0
120
120
1.8 mA
Ta = 25°C
VCE = 10 V
1.6 mA
100
1.4 mA
IB = 2 mA
25°C 100
0.8
1.2 mA
Collector current IC (mA)
Collector current IC (mA)
1.0 mA
Ta = 75°C −25°C
80 0.8 mA
80
0.6
0.6 mA
60
60
0.4 mA 0.4
40
40
/0.2 mA
0.2
20
20
e . 0
e 0
40
80
120
160
c tag Ambient temperature Ta (°C)
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V)
Collector-emitter saturation voltage VCE(sat) (V)
an edlifecycles ICIB
120
ct VCE = 10 V
n u u Ta=25°C
d .