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2SC1473 Dataheets PDF



Part Number 2SC1473
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC1473 Datasheet2SC1473 Datasheet (PDF)

Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 / ■ Features • High collector-emitter voltage (Base open) VCEO e • High transition frequency fT c tage. ■ Absolute Maximum Ratings Ta = 25°C n d le s Parameter Symbol Rating Unit 0.7±0.2 12.9±0.5 a e cyc Collector-base voltage.

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1473, 2SC1473A Silicon NPN triple diffusion planar type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 / ■ Features • High collector-emitter voltage (Base open) VCEO e • High transition frequency fT c tage. ■ Absolute Maximum Ratings Ta = 25°C n d le s Parameter Symbol Rating Unit 0.7±0.2 12.9±0.5 a e cyc Collector-base voltage 2SC1473 VCBO 250 V life (Emitter open) 2SC1473A 300 n u uct Collector-emitter voltage 2SC1473 VCEO 200 V rod (Base open) 2SC1473A 300 2.3±0.2 te tin r P Emitter-base voltage (Collector open) VEBO 7 V fou Collector current IC 70 mA ing type n. Peak collector current ICP 100 mA in n llow ce atio Collector power dissipation PC 750 mW fo an pe ed rm Junction temperature Tj 150 °C a o ludes inten ce ty d typ t info /en/ Storage temperature Tstg −55 to +150 °C 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 EIAJ: SC-43A 1: Emitter 2: Collector 3: Base TO-92-B1 Package c ued incned maintenanontinued type t lates .co.jp ■ Electrical Characteristics Ta = 25°C ± 3°C M is tin la a isc ue ou nic Parameter Symbol Conditions Min Typ Max Unit on p m d d ntin ab aso Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0 200 V isc ne co RL an (Base open) 2SA1473A 300 e/D pla dis ing U on.p Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0 7 D c w ic Collector-emitter cutoff 2SA1473 ICEO VCE = 120 V, Ta = 60°C, IB = 0 tenan follo .sem current (Base open) 2SA1473A VCE = 120 V, IB = 0 in it w Forward current transfer ratio * hFE VCE = 10 V, IC = 5 mA 60 Ma e vis ://ww Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA as ttp Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz 50 Ple h Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz V 1 µA 1 220  1.2 V 80 MHz 10 pF (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 60 to 150 100 to 220 Publication date: March 2004 SJC00105BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1473, 2SC1473A Collector power dissipation PC (W) Collector current IC (mA) PC  Ta IC  VCE IC  VBE 1.0 120 120 1.8 mA Ta = 25°C VCE = 10 V 1.6 mA 100 1.4 mA IB = 2 mA 25°C 100 0.8 1.2 mA Collector current IC (mA) Collector current IC (mA) 1.0 mA Ta = 75°C −25°C 80 0.8 mA 80 0.6 0.6 mA 60 60 0.4 mA 0.4 40 40 /0.2 mA 0.2 20 20 e . 0 e 0 40 80 120 160 c tag Ambient temperature Ta (°C) 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) 0 0 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) Collector-emitter saturation voltage VCE(sat) (V) an edlifecycles ICIB 120 ct VCE = 10 V n u u Ta=25°C d .


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