2SC1472

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 2. Collector 3. Base 3 2 1 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 –55 to +150 Unit V V V mA mA mW °C °C 2 2SC1472 (K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 — — 1 1 Typ — — — — — — — — — — 60 Max — 100 100 100000 — — 1.5 2.0 — 10 — Unit V nA nA Test conditions I C = 1 mA, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 I C = 10 mA, VCE = 5 V I C = 100 mA, VCE = 5 V (Pulse Test) I C = 400 mA, VCE = 5 V (Pulse Test) Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio I CBO I EBO hFE1* hFE2* 2000 3000 3000 — — 50 — — hFE3* 1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob t on V V MHz pF ns I C = 100 mA, IB = 0.1 mA I C = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V I C = 100 IB1 = 100 mA I B2 = –IB1 Turn off time Storage time Note: hFE1 hFE2 hFE3 A t off t stg B — — 800 350 — — ns ns 1. The 2SC1472(K) is grouped by h FE as follows. 2000 to 1...