FSS294

www.DataSheet.co.kr Ordering number : EN8937 FSS294 SANYO Semiconductors DATA SHEET FSS294 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=7.8mΩ(typ.) Input capacitance Ciss=2650pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm), PW≤10s Conditions Ratings 40 ±20 13 52 3.0 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7005A-002 5.0 0.8 8 5 0.2 Product & Package Information Package : SOP8 JEITA, JEDEC : SC-87, SOT-96 Minimum Packing Quantity : 1,000 pcs./reel Packing Type : TL Marking 0.1 6.0 4.4 0.3 S294 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 4 TL LOT No. 0.8 1 1.27 4 0.43 Electrical Connection 5, 6, 7, 8 1.8 MAX 1.5 0.7 1, 2, 3 http://semicon.sanyo.com/en/network 82411PA TKIM TC-00002631 No.8937-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FSS294 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourc...