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EFC4602 Dataheets PDF



Part Number EFC4602
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet EFC4602 DatasheetEFC4602 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENA1048 EFC4602 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4602 Features • • • General-Purpose Switching Device Applications 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS I.

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www.DataSheet.co.kr Ordering number : ENA1048 EFC4602 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4602 Features • • • General-Purpose Switching Device Applications 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW≤100μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2✕0.8mm) Conditions Ratings 20 ±12 6 60 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) ⏐yfs⏐ RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=1.5A, VGS=3.1V IS=1.5A, VGS=2.5V Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 0.5 4.5 19.5 20 23 23 7.5 28 29 33 38 36.5 38 43 53.5 Ratings min 20 1 ±10 1.3 typ max Unit V μA μA V S mΩ mΩ mΩ mΩ Static Source-to-Source On-State Resistance Marking : FB Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40208PF TI IM TC-00001296 No. A1048-1/6 Datasheet pdf - http://www.DataSheet4U.net/ w w w . D a t a S h e e t . c o . k r EFC4602 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Forward Source-to-Source Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VF(S-S) Conditions VSS=10V, f=1MHz VSS=10V, f=1MHz VSS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VSS=10V, VGS=10V, IS=6A IS=6A, VGS=0V Test Circuit 8 Test Circuit 8 Test Circuit 8 Test Circuit 7 Test Circuit 7 Test Circuit 7 Test Circuit 7 Test Circuit 6 Ratings min typ 1000 180 140 23 185 160 200 13 0.78 1.2 max Unit pF pF pF ns ns ns ns nC V Package Dimensions unit : mm (typ) 7056-001 1.81 4 3 Electrical Connection 1 2 1.81 0.28 1 2 3 0.65 1 0.65 0.27 4 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 2 4 3 0.37 SANYO : EFCP1818-4CA-055 No. A1048-2/6 D a t a s h e e t www.DataSheet.co.kr EFC4602 Test Circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS S2 Test Circuit 2 IGSS (+) / (--) S2 G2 G2 G1 G1 S1 IT11565 S1 IT11566 Test Circuit 3 VGS (off) S2 Test Circuit 4 ⏐yfs⏐ S2 G2 G2 10V 1mA G1 G1 S1 IT11567 S1 IT11568 Test Circuit 5 RSS (on) S2 Test Circuit 6 VF (S-S) S2 4.5V G2 G2 G1 G1 S1 IT11569 S1 IT11570 Test Circuit 7 td (on), tr, td (off), tf VDD=10V IS=3A RL=3.33Ω V S1 OUT VIN G1 PW=10μs D.C.≤1% G2 S2 IT11571 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. No. A1048-3/6 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr EFC4602 Test Circuit 8 Ciss S2 G2 Coss S2 G2 .


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