ECH8661

w w w . D a t a S h e e t . c o . k r Ordering number : ENA1777 ECH8661 SANYO Semiconductors DATA SHEET ECH8661 Features N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm) Conditions N-channel 30 ±20 7 40 1.3 1.5 150 --55 to +150 P-channel --30 ±20 --5.5 --40 Unit V V A A W W °C °C Package Dimensions unit : mm (typ) 7011A-001 Top View 0.25 2.9 0.15 8 5 0 to 0.02 2.8 2.3 Product & Package Information Package : ECH8 JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking TG TL LOT No. 0.25 1 0.65 4 0.3 Electrical Connection 8 7 6 5 0.9 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Bottom View 0.07 SANYO : ECH8 1 2 3 4 http://semicon.sanyo.com/en/networ...