ECH8309

www.DataSheet.co.kr Ordering number : ENA1418A ECH8309 SANYO Semiconductors DATA SHEET ECH8309 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --12 ±10 --9.5 --40 1.5 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--4.5A ID=--4.5A, VGS=--4.5V ID=--2A, VGS=--2.5V ID=--1A, VGS=--1.8V --0.4 9.6 16 12 18 30 16 26 53 Ratings min --12 --10 ±10 --1.3 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : JL Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipme...