CPH6347

www.DataSheet.co.kr Ordering number : ENA1334A CPH6347 SANYO Semiconductors DATA SHEET CPH6347 Features P-Channel Silicon MOSFET General-Purpose Switching Device Applications 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --20 ±12 -6 --24 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Conditions -1mA, VGS=0V ID=-20V, VGS=0V VDS=VGS=±8V, VDS=0V -10V, ID=-1mA VDS=-10V, ID=-3A VDS=-3A, VGS=-4.5V ID=-1.5A, VGS=-2.5V ID=-0.6A, VGS=-1.8V ID=--0.4 4.3 7.3 30 44 68 39 66 102 Ratings min --20 -1 ±10 --1.4 typ max Unit V μA μA V S mΩ mΩ mΩ Marking : YZ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equip...