CPH6223

www.DataSheet.co.kr Ordering number : ENN7386 CPH6123 / CPH6223 PNP / NPN Epitaxial Planar Silicon Transistors CPH6123 / CPH6223 High-Current Switching Applications Applications Package Dimensions unit : mm 2146A [CPH6123 / CPH6223] 0.2 0.05 2.9 6 5 4 0.15 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobe. Features 0.4 Specifications ( ) : CPH6123 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions 0.7 0.9 Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. 0.6 1 2 0.2 3 0.95 0.6 1.6 2.8 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : CPH6 Ratings (-50)100 (-50)100 (--)50 (-)6 (-)3 (-)6 (-)600 1.3 150 --55 to +150 Unit V V V V A A mA W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)...