CPH6003A

www.DataSheet.co.kr Ordering number : ENA1078 CPH6003A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6003A Features High-frequency Medium-power Amplifier Applications High gain (fT=7GHz typ). High Current : (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg When mounted on ceramic substrate (250mm2✕0.8mm) Conditions Ratings 20 12 2 150 800 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA 100 7 Conditions Ratings min typ max 1.0 10 180 GHz Unit μA μA Marking : GC Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear contro...