Ordering number : ENN8278A
CPH5901
CPH5901
TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junct...
Ordering number : ENN8278A
CPH5901
CPH5901
TR :
NPN Epitaxial Planar Silicon
Transistor FET : N-Channel Silicon Junction FET
High-Frequency Amplifier. AM Amplifier.
Features
Low-Frequency Amplifier Applications
Composite type with J-FET and
NPN transistors contained in the CPH5 package, improving the mounting efficiency greatly.
The CPH5901 is formed with two chips, being equivalent to the 2SK932 and the other the 2SC4639, placed in one
package. Common drain and emitter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [FET] Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation [Common Ratings] Total Dissipation Junction Temperature Storage Temperature Marking : 1A
Symbol
VDSX VGDS
IG ID PD
VCBO VCEO VEBO
IC ICP IB PC
PT Tj Tstg
Conditions Mounted on a ceramic board (600mm2✕0.8mm)
Mounted on a ceramic board (600mm2✕0.8mm) Mounted on a ceramic board (600mm2✕0.8mm)
Ratings
Unit
15
V
--15
V
10 mA
50 mA
350 mW
55
V
50
V
6
V
150 mA
300 mA
30 mA
350 mW
500 mW
150
°C
--55 to +150
°C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications w...
