CPH5705

www.DataSheet.co.kr Ordering number : ENN6591 CPH5705 TR : PNP Epitaxial Planar Silicon Transistor SBD : Sohottky Barrier Diode CPH5705 DC / DC Converter Applications Features Package Dimensions unit : mm 2156 [CPH5705] 2.9 5 4 3 1 0.95 2 0.4 0.6 1.6 2.8 Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. The CPH5705 consists of two chips which are equivalent to the CPH3109 and the SBS004, respectively. Ultrasmall package facilitates miniaturization in end products. 0.6 0.05 0.2 0.15 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5 Ratings -30 -30 --5 --3 --5 --600 Unit V V V A A mA W °C °C V V A A °C °C 0.2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Marking : PE VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Symbol Conditions 0.4 Mounted on a ceramic board (600mm2!0.8mm) 0.7 0.9 0.9 150 --55 to +125 15 15 1 10 --55 to +125 --55 to +125 Any and all SANYO products described or contained herein do not have specifications that can hand...