ATP218

www.DataSheet.co.kr Ordering number : EN8970 ATP218 SANYO Semiconductors DATA SHEET ATP218 Features N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=2.9mΩ(typ.) 2.5V drive Input Capacitance Ciss=6600pF(typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 30 ±10 100 300 60 150 --55 to +150 235 50 Unit V V A A W °C °C mJ A Note : *1 VDD=15V, L=100μH, IAV=50A *2 L≤100μH, Single pulse Package Dimensions unit : mm (typ) 7057-001 6.5 0.5 1.5 0.4 Product & Package Information Package : ATPAK JEITA, JEDEC : Minimum Packing Quantity : 3,000 pcs./reel 4.6 2.6 0.4 Packing Type: TL Marking ATP218 4 4.6 6.05 LOT No. TL 7.3 9.5 Electrical Connection 1.7 2 0.5 1 0.8 2.3 2.3 3 0.55 0.7 2,4 0.6 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : ATPAK 1 0.1 3 http://semicon.sanyo.com/en/network 51111PA TKIM TC-00002592 No.8970-1/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr ATP218 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward T...