N-Channel Silicon MOSFET
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Ordering number : ENA1507
ATP212
SANYO Semiconductors
DATA SHEET
ATP212
Features
• • • • •
N-C...
Description
www.DataSheet.co.kr
Ordering number : ENA1507
ATP212
SANYO Semiconductors
DATA SHEET
ATP212
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Large current. Slim package. 4V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 60 ±20 35 105 40 150 --55 to +150 19 18 Unit V V A A W °C °C mJ A
Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V Ratings min 60 1 ±10 typ max Unit V μA μA
Marking : ATP212
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