2SC1345

2SC1345(K) Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1345 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 50 5 — — 1 Typ — — — — — — — — 2.3 230 — — Max — — — 0.5 0.5 1200 0.75 0.5 3.5 — 8 1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Noise figure V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) Cob fT NF 250 — — — — — — V V pF MHz dB dB VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 12 V, IC = 2 mA VCE = 6 V, IC = 0.1 mA, f = 10 Hz, Rg = 10 kΩ VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ Note: D 1. The 2SC1345(K) is grouped by h FE as follows. E 400 to 800 F 600 to 1200 250 to 500 2 2SC1345 (K) Maximum Collector Dissi...