50C02MH

www.DataSheet.co.kr Ordering number : ENN7516 50C02MH NPN Epitaxial Planar Silicon Transistor 50C02MH Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions unit : mm 2194A [50C02MH] 0.25 Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features 0.3 3 Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.15 2.1 1.6 0.25 0.65 2.0 (Bottom view) 0.07 2 1 3 1 : Base 2 : Emitter 3 : Collector 1 2 (Top view) 0.85 SANYO : MCPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 60 50 5 500 1.0 600 150 --55 to +150 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : CM Continued on next page. Any and all SANYO products described or contained herein do not have specificatio...