2SC1344

2SC1344, 2SC1345 Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1344, 2SC1345 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1344 30 30 5 100 200 150 –55 to +150 2SC1345 55 50 5 100 200 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SC1344 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO 1 2SC1345 Max — — — 0.5 0.5 Min 55 50 5 — — Typ — — — — — — — — 230 — — — Max — — — 0.5 0.5 1200 0.75 0.5 — 3.5 8 1 V V MHz pF dB dB Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB =18 V, IE = 0 VCB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 10 Hz, Rg = 10 kΩ VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kΩ Min 30 30 5 — — 250 — — — — — — Typ — — — — — — — — 230 — — — DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 1200 250 0.75 0.5 — 3.5 8 1 — — — — — — VCE(sat) Gain bandwidth product f T Collector output ...