FM25L04B

www.DataSheet.co.kr Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz Frequency Direct Hardware Replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption Low Voltage Operation 2.7-3.6V 200 µA Active Current (1 MHz) 3 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40°C to +85°C 8-pin “Green”/RoHS SOIC and TDFN Packages Description The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25L04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. The FM25L04B is capable of supporting 1014 read/write cycles, or a million times more write cycles ...