4Kb Serial 5V F-RAM Memory
www.DataSheet.co.kr
Preliminary
FM25040C
4Kb Serial 5V F-RAM Memory Features
4K bit Ferroelectric Nonvolatile RAM Or...
Description
www.DataSheet.co.kr
Preliminary
FM25040C
4Kb Serial 5V F-RAM Memory Features
4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 36 year Data Retention at +75C NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz maximum Bus Frequency Direct hardware replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption 250 A Active Current (1 MHz) 4 A (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40 C to +85 C 8-pin “Green”/RoHS SOIC (-G)
Description
The FM25040C is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 36 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25040C performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM25040C is capable of supporting up to 1012 read/write cycles, or a million times more write cycles than EEPROM....
Similar Datasheet