Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1318
Silicon NPN epitaxial planar type
...
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1318
Silicon
NPN epitaxial planar type
For low-frequency power amplification and driver amplification Complementary to 2SA0720
Features
Package
Low collector-emitter saturation voltage VCE(sat)
Code
Complementary pair with 2SA0720
TO-92B-B1
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open)
VCBO
60
V
Pin Name 1. Emitter 2. Collector 3. Base
Collector-emitter voltage (Base open)
e pe) Emitter-base voltage (Collector open) c e. d ty Collector current n d stag tinue Peak collector current a e cle con Collector power dissipation
lifecy , dis Junction temperature
n u duct typed Storage temperature
VCEO
50
V
VEBO
7
V
IC
0.5
A
ICP
1
A
PC
625
mW
Tj
150
°C
Tstg –55 to +150 °C
te ting four Pcroontinued Electrical Characteristics Ta = 25°C±3°C
win dis Parameter
Symbol
Conditions
Min Typ Max
in n s follo laned Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
60
a o lude e, p Collector-emitter voltage (Base open)
VCEO IC = 10 mA, IB = 0
50
inc typ Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
7
c tinued ance Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
M is iscon ainten Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 150 mA
85
/D m hFE2 VCE = 10 V, IC = 500 mA
40
ce pe, Collector-emitter saturation voltage
VCE(sat) IC = 300 mA, ...
