FM24C64B

www.DataSheet.co.kr Preliminary FM24C64B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface Up to 1 MHz maximum bus frequency Direct hardware replacement for EEPROM Supports legacy timing for 100 kHz & 400 kHz Low Power Operation 5V operation 100 µA Active Current (100 kHz) 4 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40° C to +85° C 8-pin “Green”/RoHS SOIC (-G) Description The FM24C64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24C64B is capable of supporting 1012 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM24C64B ideal for nonvolatile memory applications req...