2SK4126

www.DataSheet.co.kr Ordering number : ENA0748A 2SK4126 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4126 Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *2 Avalanche Current *3 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*1 Conditions Ratings 650 ±30 15 48 2.5 170 150 --55 to +150 132 15 Unit V V A A W W °C °C mJ A *1 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *2 VDD=99V, L=1mH, IAV=15A *3 L≤1mH, single pulse Marking : K4126 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerosp...