2SK4123LS

www.DataSheet.co.kr Ordering number : ENA0826 2SK4123LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4123LS Features General-Purpose Switching Device Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *3 Avalanche Current *4 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition) Conditions Ratings 450 ±30 18 12.4 66 2.0 40 150 --55 to +150 412 18 Unit V V A A A W W °C °C mJ A *1 Shows chip capability *2 Package limited *3 VDD=99V, L=2mH, IAV=18A *4 L≤2mH, single pulse Marking : K4123 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life...