FM21LD16

www.DataSheet.co.kr Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay™ Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process SRAM Compatible JEDEC 128Kx16 SRAM Pinout 60 ns Access Time, 110 ns Cycle Time Advanced Features Software Programmable Block Write Protect Superior to Battery-backed SRAM Modules No Battery Concerns Monolithic Reliability True Surface Mount Solution, No Rework Steps Superior for Moisture, Shock, and Vibration Low Power Operation 2.7V – 3.6V Power Supply Low Standby Current (90µA typ.) Low Active Current (8 mA typ.) Industry Standard Configuration Industrial Temperature -40° C to +85° C 48-ball “Green”/RoHS FBGA package Pin compatible with FM22LD16 (4Mb) and FM23MLD16 (8Mb) The device is available in a 48-ball FBGA package. Device specifications are guaranteed over industrial temperature range –40°C to +85°C. Pin Configuration 1 2 3 4 5 6 Description The FM21LD16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high writ...